The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Aug. 02, 2017
Applicant:
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Inventors:
Hsin-Hua Lin, New Taipei, TW;
Yi-Chun Kao, New Taipei, TW;
Assignee:
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/78696 (2013.01);
Abstract
A TFT substrate includes a substrate and a plurality of TFTs on the substrate. Each TFT includes a channel layer, a source electrode and a drain electrode on opposite sides of the channel layer. An ohmic contact layer is applied between the channel layer and the source electrode, and between the channel layer and the drain electrode. Both the channel layer and the ohmic contact layer are made of a metal oxide containing zinc. The channel layer has a zinc atomic percentage of less than 35%, and the ohmic contact layer has a zinc atomic percentage of more than 65%.