The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Mar. 08, 2017
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventor:
Akira Endoh, Machida, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/165 (2006.01); H01L 29/205 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 29/0688 (2013.01); H01L 29/165 (2013.01); H01L 29/205 (2013.01); H01L 29/42356 (2013.01); H01L 29/66462 (2013.01);
Abstract
A compound semiconductor device includes a compound semiconductor layer, a gate electrode disposed above the compound semiconductor layer, and source and drain electrodes disposed above the compound semiconductor layer with the gate electrode between the source and drain electrodes, wherein the compound semiconductor layer has a groove in a surface thereof at least between the source electrode and the gate electrode in a region between the source electrode and the drain electrode, the groove gradually deepened toward the source electrode.