The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2018

Filed:

Mar. 29, 2017
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Henry Litzmann Edwards, Garland, TX (US);

Greg Charles Baldwin, Plano, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 21/266 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41758 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/823475 (2013.01); H01L 27/088 (2013.01); H01L 29/0847 (2013.01); H01L 29/42376 (2013.01); H01L 29/456 (2013.01); H01L 29/665 (2013.01); H01L 29/66575 (2013.01); H01L 29/7833 (2013.01);
Abstract

Methods and apparatus for quantum point contacts. In an arrangement, a quantum point contact device includes at least one well region in a portion of a semiconductor substrate and doped to a first conductivity type; a gate structure disposed on a surface of the semiconductor substrate; the gate structure further comprising a quantum point contact formed in a constricted area, the constricted area having a width and a length arranged so that a maximum dimension is less than a predetermined distance equal to about 35 nanometers; a drain/source region in the well region doped to a second conductivity type opposite the first conductivity type; a source/drain region in the well region doped to the second conductivity type; a first and second lightly doped drain region in the at least one well region. Additional methods and apparatus are disclosed.


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