The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Feb. 13, 2017
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Tatsuo Shimizu, Shinagawa, JP;
Hisashi Saito, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/40 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/408 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/401 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01);
Abstract
A semiconductor device according to an embodiment includes a nitride semiconductor layer, an insulating layer provided on the nitride semiconductor layer, a first region provided in the nitride semiconductor layer, and a second region which is provided between the first region and the insulating layer in the nitride semiconductor layer and has a higher electric resistivity than the first region.