IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10079281 B1

PDFFull Text
Date of Patent:
Sep. 18, 2018

Filed:

Feb. 16, 2017

Semiconductor devices and methods for forming a semiconductor device

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Gerhard Schmidt, Wernberg-Wudmath, AT;

Erwin Lercher, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Thanhha Pham

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/761 (2006.01); H01L 21/266 (2006.01); H01L 21/04 (2006.01); H01L 21/34 (2006.01); H01L 21/40 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/10 (2006.01); H01L 21/762 (2006.01); H01L 21/225 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); H01L 21/04 (2013.01); H01L 21/2253 (2013.01); H01L 21/266 (2013.01); H01L 21/34 (2013.01); H01L 21/40 (2013.01); H01L 21/761 (2013.01); H01L 21/76202 (2013.01); H01L 29/0619 (2013.01); H01L 29/0684 (2013.01); H01L 29/402 (2013.01); H01L 29/4236 (2013.01); H01L 29/66348 (2013.01); H01L 29/66712 (2013.01); H01L 29/7397 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/7823 (2013.01);
Abstract

A method for forming a semiconductor device includes incorporating dopants of a first conductivity type into a nearby body region portion of a semiconductor substrate having a base doping of the first conductivity type. The incorporation of the dopants of the first conductivity type is masked by a mask structure at at least part of an edge region of the semiconductor substrate. The method further includes forming a body region of a transistor structure of a second conductivity type in the semiconductor substrate. The nearby body region portion of the semiconductor substrate is located adjacent to the body region of the transistor structure.

Find Patent Forward Citations

Loading…