The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Oct. 10, 2016
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventor:
Florent Rochette, Saint-Jean de Bournay, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/101 (2006.01); H01L 31/103 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14696 (2013.01); H01L 27/1461 (2013.01); H01L 27/14649 (2013.01); H01L 27/14698 (2013.01); H01L 31/1013 (2013.01); H01L 31/1032 (2013.01); H01L 31/1832 (2013.01);
Abstract
A method for manufacturing a multi-spectral photodiode array in a CdHgTe semiconductor layer constituted of pixels, the method including a step of producing a PN junction in each pixel and further includes producing a cadmium-rich structure on the semiconductor layer, structured so that all the pixels are not surmounted by a same quantity of cadmium atoms, this quantity being able to be zero; and inter-diffusion annealing, realizing the diffusion of cadmium atoms from the cadmium-rich structure to the semiconductor layer. Pixels that do not all have the same cutoff wavelength are thereby obtained.