The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Aug. 26, 2016
Hauk Han, Hawseong-si, KR;
Je-hyeon Park, Suwon-si, KR;
Kihyun Yoon, Seongnam-si, KR;
Changwon Lee, Hawseong-si, KR;
Hyunseok Lim, Seongnam-si, KR;
Jooyeon Ha, Seoul, KR;
Hauk Han, Hawseong-si, KR;
Je-Hyeon Park, Suwon-si, KR;
Kihyun Yoon, Seongnam-si, KR;
Changwon Lee, Hawseong-si, KR;
HyunSeok Lim, Seongnam-si, KR;
Jooyeon Ha, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes a lower structure including a lower conductor, an upper structure having an opening exposing the lower conductor on the lower structure, and a connection structure filling the opening and connected to the lower conductor. The connection structure includes a first tungsten layer covering an inner surface of the opening and defining a recess region in the opening, and a second tungsten layer filling the recess region on the first tungsten layer. A grain size of the second tungsten layer in an upper portion of the connection structure is greater than a grain size of the second tungsten layer in a lower portion of the connection structure.