The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2018

Filed:

Jul. 10, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ji-hoon Kim, Geoje-si, KR;

Won-chul Lee, Seongnam-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 27/108 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10808 (2013.01); H01L 23/562 (2013.01); H01L 27/10852 (2013.01); H01L 28/86 (2013.01); H01L 28/90 (2013.01);
Abstract

A semiconductor memory device may include: a substrate having a cell area defined thereon, the cell area including a cell block area and an edge area; a plurality of bottom electrodes, on the substrate, which are in parallel with a top surface of the substrate and a first direction in parallel with a top surface of the substrate, and are arranged along a second direction intersecting the first direction; and a support structure pattern, in a flat plate shape, which connects the bottom electrodes to each other, supports the bottom electrodes onto the substrate, and includes a plurality of open areas, wherein a first profile, which is a horizontal cross-sectional profile in the edge area of the support structure pattern, has a wave shape.


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