The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Sep. 21, 2016
Yong-hoon Son, Yongin-si, KR;
Cha-dong Yeo, Suwon-si, KR;
Han-mei Choi, Seoul, KR;
Kyung-hyun Kim, Seoul, KR;
Phil-ouk Nam, Suwon-si, KR;
Kwang-chul Park, Suwon-si, KR;
Yeon-sil Sohn, Yongin-si, KR;
Jin-i Lee, Hwaseong-si, KR;
Won-bong Jung, Seoul, KR;
Yong-Hoon Son, Yongin-si, KR;
Cha-Dong Yeo, Suwon-si, KR;
Han-Mei Choi, Seoul, KR;
Kyung-Hyun Kim, Seoul, KR;
Phil-Ouk Nam, Suwon-si, KR;
Kwang-Chul Park, Suwon-si, KR;
Yeon-Sil Sohn, Yongin-si, KR;
Jin-I Lee, Hwaseong-si, KR;
Won-Bong Jung, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggie-do, KR;
Abstract
A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a vertical direction with respect to a top surface of the substrate, a plurality of non-metal gate patterns surrounding the channels and being stacked on top of each other and spaced apart from each other along the vertical direction, and a plurality of metal gate patterns stacked on top of each other. The metal gate patterns are spaced apart from each other along the vertical direction. Each of the metal gate patterns surrounds a corresponding one of the non-metal gate patterns.