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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10079186 B1

PDFFull Text
Date of Patent:
Sep. 18, 2018

Filed:

Sep. 23, 2016

Semiconductor device and method of fabricating the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Sangyub Ie, Yongin-si, KR;

Minwoo Song, Seongnam-si, KR;

Jonghan Lee, Namyangju-si, KR;

Hyungsuk Jung, Suwon-si, KR;

Hyeri Hong, Incheon, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:

Lee & Morse, P.C.

Primary Examiner:

Stephen Bradley

Assistant Examiner:

Wasiul Haider

Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 21/66 (2006.01); H01L 27/088 (2006.01); H01L 29/49 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 22/34 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823462 (2013.01); H01L 22/14 (2013.01); H01L 27/0886 (2013.01); H01L 29/0847 (2013.01); H01L 29/42364 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01); H01L 21/823418 (2013.01);
Abstract

A method of fabricating a semiconductor device includes forming first and second fin patterns in an active region and in a measurement region of a substrate, respectively, the measurement region being different from the active region, forming first and second gate electrodes to cross the first and second fin patterns, respectively, and measuring a contact potential difference (Vcpd) of the second gate electrode to determine a threshold voltage of the first gate electrode based on the measured contact potential difference (Vcpd).

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