The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2018

Filed:

Jul. 06, 2017
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventors:

Tsunehiro Nakajima, Matsumoto, JP;

Yoshikazu Takahashi, Matsumoto, JP;

Norihiro Nashida, Nagano, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/482 (2006.01); H01L 21/321 (2006.01); H01L 23/00 (2006.01); H01L 23/492 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 21/283 (2006.01); H01L 23/373 (2006.01); H01L 21/683 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32115 (2013.01); H01L 21/283 (2013.01); H01L 21/6835 (2013.01); H01L 21/6836 (2013.01); H01L 23/3735 (2013.01); H01L 23/482 (2013.01); H01L 23/492 (2013.01); H01L 24/24 (2013.01); H01L 24/34 (2013.01); H01L 25/0652 (2013.01); H01L 25/50 (2013.01); H01L 23/49811 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/24137 (2013.01);
Abstract

A semiconductor device manufacturing method, sequentially includes a semiconductor element preparation step of preparing a first semiconductor element on which is formed a plurality of metal electrodes, a step of covering a surface of the first semiconductor element on which the metal electrode is not formed with a first insulating member, and a step of forming a second metal layer that conductively connects the metal electrode of the first semiconductor element and a first metal layer on an insulated circuit substrate across the second insulating member.


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