The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2018

Filed:

Oct. 13, 2016
Applicants:

Imec Vzw, Leuven, BE;

Katholieke Universiteit Leuven, Ku Leuven R&d, Leuven, BE;

Inventors:

Boon Teik Chan, Leuven, BE;

Arjun Singh, Chandigarh, IN;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/47 (2006.01); H01L 21/027 (2006.01); H01L 29/06 (2006.01); H01L 21/308 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0273 (2013.01); H01L 21/02356 (2013.01); H01L 21/3085 (2013.01); H01L 21/3086 (2013.01); H01L 21/47 (2013.01); H01L 29/0692 (2013.01);
Abstract

The present disclosure relates to a method for pattern formation on a substrate. An example embodiment includes a method for pattern formation. The method includes providing a photoresist layer on a composite substrate. The method also includes patterning the photoresist layer by lithography to define a plurality of parallel stripe photoresist structures. The method further includes providing a block copolymer on and along the composite substrate, in between the parallel stripe photoresist structures. The block copolymer includes a first component and a second component. The method additionally includes subjecting the block copolymer to predetermined conditions to cause phase separation of the first component and the second component. In addition, the method includes performing a sequential infiltration synthesis process. Still further, the method includes selectively removing the parallel stripe photoresist structures. Additionally, the method includes defining a core stripe structure. Even further, the method includes performing a self-aligned multiple patterning process.


Find Patent Forward Citations

Chan, Boon. (2018). Method for pattern formation on a substrate, associated semiconductor devices, and uses of the method (U.S. Patent No. 10079145). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10079145

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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