The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2018

Filed:

Jan. 29, 2016
Applicant:

Dh Technologies Development Pte. Ltd., Singapore, SG;

Inventor:

Nic G. Bloomfield, Newmarket, CA;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 49/00 (2006.01); H01J 49/04 (2006.01); H01J 49/06 (2006.01);
U.S. Cl.
CPC ...
H01J 49/0045 (2013.01); H01J 49/04 (2013.01); H01J 49/063 (2013.01);
Abstract

A sample is ionized using an ion source and the ion beam is received using a tandem mass spectrometer. An m/z range is divided into two or more precursor ion isolation windows. Two or more values for a fragmentation parameter are selected. A first value of the two or more values for the fragmentation parameter has a level that fragments a minimal amount of ions of the ion beam. The one or more additional values have increasingly aggressive levels that produce increasingly more fragmentation of the ions of the ion beam. For each precursor ion isolation window, the tandem mass spectrometer is instructed to perform a selection and fragmentation of the ion beam using the precursor ion isolation window and the first value and is instructed to perform one or more additional selections and fragmentations of the ion beam using the precursor ion isolation window and using the one or more additional values.


Find Patent Forward Citations

Loading…