The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Aug. 14, 2014
Renesas Electronics Corporation, Tokyo, JP;
Yoji Kashihara, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a first memory mat (L) including a plurality of split type memory cells (L), a second memory mat (R) including a plurality of split type memory cells (R), a first control gate line (CGL) connected to a control gate (CG) of a split type memory cell (L), and a second control gate line (CGR) connected to a control gate (CG) of a split type memory cell (R). The semiconductor device further includes a first memory gate line (MGL) connected to a memory gate (MG) of the split type memory cell (L), and a second memory gate line (MGR) connected to a memory gate (MG) of the split type memory cell (R).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile