The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2018

Filed:

Jun. 06, 2014
Applicants:

Innovastella Co., Ltd., Tokyo, JP;

School Juridical Person of Fukuoka Kogyo Daigaku, Fukuoka, JP;

Inventors:

Ryuichi Katayama, Fukuoka, JP;

Katsumi Yoshizawa, Tokyo, JP;

Satoshi Sugiura, Tokyo, JP;

Takayuki Kasuya, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/02 (2006.01); G11B 11/00 (2006.01); G11B 5/012 (2006.01); G11B 5/31 (2006.01); G11B 5/00 (2006.01);
U.S. Cl.
CPC ...
G11B 5/012 (2013.01); G11B 5/31 (2013.01); G11B 2005/0021 (2013.01);
Abstract

A combination of a semiconductor member and a metal member is selected appropriately from a view point of increasing an enhancement factor of a near-field light. A device () has a semiconductor member () and a metal member (), a near-field light is generated at the metal member when an energy is supplied to the semiconductor member, the metal member is made of an alloy including a first metal and a second metal, a condition of Rm<Rs<Rmis satisfied, wherein a resonance wavelength of the first metal is Rm, a resonance wavelength of the second metal is Rm, and a resonance wavelength of the semiconductor member is Rs.


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