The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Jun. 29, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Sun-Young Lim, Hwasong-si, KR;
Taeksoo Kim, Suwon-si, KR;
Indong Kim, Seongnam-si, KR;
Hangu Sohn, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 13/00 (2006.01); G06F 13/28 (2006.01); G06F 3/06 (2006.01); G11C 14/00 (2006.01); G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0604 (2013.01); G06F 3/064 (2013.01); G06F 3/065 (2013.01); G06F 3/0619 (2013.01); G06F 3/0659 (2013.01); G06F 3/0665 (2013.01); G06F 3/0679 (2013.01); G11C 14/0018 (2013.01); G11C 14/0063 (2013.01); G11C 11/005 (2013.01);
Abstract
Electronic devices and memory management methods thereof are provided. Memory management methods may include setting page data of a nonvolatile memory as a read/write mode, copying the page data of the nonvolatile memory to a dynamic random access memory (DRAM) and setting the page data of the DRAM copied from the nonvolatile memory as a read only mode.