The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Aug. 22, 2016
Renesas Electronics Corporation, Tokyo, JP;
Photonics Electronics Technology Research Association, Tokyo, JP;
Shinichi Watanuki, Hitachinaka, JP;
Akira Mitsuiki, Tokyo, JP;
Atsuro Inada, Hitachinaka, JP;
Tohru Mogami, Tokyo, JP;
Tsuyoshi Horikawa, Tokyo, JP;
Keizo Kinoshita, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION, Tokyo, JP;
Abstract
When an optical waveguide is formed, an area of an opening of a resist mask is equal to an area of a semiconductor layer for a dummy pattern exposed from the resist mask, and the semiconductor layer for the dummy pattern exposed from the resist mask has a uniform thickness in a region in which the dummy pattern is formed. As a result, an effective pattern density does not change in etching the semiconductor layer for the dummy pattern, and accordingly, it is possible to form a rib-shaped optical waveguide having desired dimensions and a desired shape.