The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2018

Filed:

Nov. 30, 2015
Applicant:

Wisconsin Alumni Research Foundation, Madison, WI (US);

Inventors:

Song Jin, Madison, WI (US);

Yongping Fu, Madison, WI (US);

Fei Meng, Madison, WI (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C07F 7/00 (2006.01); C30B 7/14 (2006.01); C30B 29/60 (2006.01); C07F 7/24 (2006.01); H01L 51/00 (2006.01); C30B 29/12 (2006.01); H01L 51/50 (2006.01);
U.S. Cl.
CPC ...
C30B 7/14 (2013.01); C07F 7/24 (2013.01); C30B 29/12 (2013.01); C30B 29/60 (2013.01); H01L 51/0084 (2013.01); H01L 51/5012 (2013.01);
Abstract

A method for growing single-crystal perovskite structures comprises immersing a film of a metal precursor compound on a surface of a substrate, the metal precursor compound comprising a metal ion B, in a solution comprising a cation precursor compound, the cation precursor compound comprising a cation ion A and an anion X, at a concentration of the cation precursor compound, a growth time, and a growth temperature sufficient to dissolve the film to release the metal ion B to form a complex with the anion X and sufficient to induce recrystallization of the complex with the cation ion A to form a plurality of single-crystal perovskite structures composed of A, B and X. The single-crystal perovskite structures, devices incorporating the same, and methods of using the devices are also provided.


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