The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2018
Filed:
Feb. 01, 2017
Technology Hub Inc., Osaka-shi, JP;
Megachips Corporation, Osaka-shi, JP;
Yukihiro Ukai, Suita, JP;
Takashi Sawada, Nara, JP;
Technology Hub Inc., Osaka-shi, JP;
MegaChips Corporation, Osaka-shi, JP;
Abstract
A light receiving element includes a first semiconductor layer of a first conductivity type to which a first potential is to be applied, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer, first and second regions of the first conductivity type formed in an upper portion of the second semiconductor layer, a first electrode that is located on the first region and is to be subjected to application of a second potential, a second electrode located on the second region, an insulation layer formed on the second semiconductor layer between the first and the second regions, and a gate electrode that is formed on the insulation layer and is to be subjected to application of a gate voltage. A current readout unit detects, as a pixel signal reflecting an amount of light received, a current flowing from the first region to the second region.