The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2018
Filed:
Nov. 25, 2015
California Institute of Technology, Pasadena, CA (US);
Jose Vicente Siles Perez, Pasadena, CA (US);
Choonsup Lee, La Palma, CA (US);
Goutam Chattopadhyay, Pasadena, CA (US);
Ken B. Cooper, Glendale, CA (US);
Imran Mehdi, South Pasadena, CA (US);
Robert H. Lin, Chino, CA (US);
Alejandro Peralta, Pasadena, CA (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
A solid state device chip including diodes (generating a higher frequency output through frequency multiplication of the input frequency) and a novel on-chip power combining design. Together with the on-chip power combining, the chip has increased efficiency because the diodes' anodes, being micro-fabricated simultaneously on the same patch of a GaAs wafer under identical conditions, are very well balanced. The diodes' GaAs heterostructure and the overall chip geometry are designed to be optimized for high power operation. As a result of all these features, the device can generate record-setting power having a signal frequency in the F-band and W-band (30% conversion efficiency).