The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 11, 2018

Filed:

Nov. 27, 2017
Applicant:

Realtek Semiconductor Corporation, Hsinchu, TW;

Inventors:

Chien-I Chou, Taipei, TW;

Ka-Un Chan, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/30 (2006.01); H03F 1/02 (2006.01); H03F 3/20 (2006.01); H03F 3/217 (2006.01);
U.S. Cl.
CPC ...
H03F 1/303 (2013.01); H03F 1/0227 (2013.01); H03F 1/0261 (2013.01); H03F 3/20 (2013.01); H03F 3/217 (2013.01);
Abstract

The present invention discloses a power amplifier capable of adaptively operating in one of an energy efficient mode and a high output power mode. An embodiment of the power amplifier includes a first transistor, a second transistor, a first bias element, a second bias element, a third bias element and a plurality of switches. In the energy efficient mode, by the control over the on/off states of the switches, an inverter type power amplifier is realized with the first transistor, the second transistor, the second bias element and the third bias element. In the high output power mode, by the control over the on/off states of the switches, a common source amplifier or a common emitter amplifier is realized with the second transistor and the first bias element.


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