The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 11, 2018

Filed:

Jan. 22, 2016
Applicant:

Pacific Light Technologies Corp., Portland, OR (US);

Inventors:

Juanita Kurtin, Hillsboro, OR (US);

Brian Theobald, Beaverton, OR (US);

Matthew J. Carillo, Portland, OR (US);

Oun-Ho Park, San Jose, CA (US);

Georgeta Masson, Lafayette, CA (US);

Steven M. Hughes, Walla Walla, WA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); C09K 11/02 (2006.01); C09K 11/56 (2006.01); C09K 11/88 (2006.01); C01B 19/00 (2006.01); B82Y 30/00 (2011.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/56 (2010.01); B82Y 40/00 (2011.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/502 (2013.01); B82Y 30/00 (2013.01); C01B 19/007 (2013.01); C09K 11/02 (2013.01); C09K 11/025 (2013.01); C09K 11/565 (2013.01); C09K 11/883 (2013.01); H01L 33/005 (2013.01); H01L 33/06 (2013.01); H01L 33/56 (2013.01); H05K 999/99 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); C01P 2002/84 (2013.01); C01P 2004/04 (2013.01); C01P 2004/10 (2013.01); C01P 2004/54 (2013.01); C01P 2004/64 (2013.01); C01P 2004/80 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0083 (2013.01); Y10S 977/744 (2013.01); Y10S 977/774 (2013.01); Y10S 977/824 (2013.01); Y10S 977/89 (2013.01); Y10S 977/95 (2013.01);
Abstract

Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.


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