The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 11, 2018

Filed:

Feb. 17, 2015
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Norwin Von Malm, Nittendorf, DE;

Alexander F. Pfeuffer, Regensburg, DE;

Tansen Varghese, Regensburg, DE;

Philipp Kreuter, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0224 (2006.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 31/0352 (2006.01); H01L 31/0693 (2012.01); H01L 31/0735 (2012.01); H01L 31/056 (2014.01); H01L 23/544 (2006.01); H01L 31/0304 (2006.01); H01L 33/06 (2010.01); H01L 33/30 (2010.01); H01L 33/32 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 31/1892 (2013.01); H01L 23/544 (2013.01); H01L 31/02245 (2013.01); H01L 31/022466 (2013.01); H01L 31/03046 (2013.01); H01L 31/03048 (2013.01); H01L 31/035236 (2013.01); H01L 31/035281 (2013.01); H01L 31/056 (2014.12); H01L 31/0693 (2013.01); H01L 31/0735 (2013.01); H01L 31/186 (2013.01); H01L 33/0079 (2013.01); H01L 33/0095 (2013.01); H01L 33/06 (2013.01); H01L 33/30 (2013.01); H01L 33/32 (2013.01); H01L 33/382 (2013.01); H01L 33/42 (2013.01); H01L 2223/5446 (2013.01); H01L 2933/0016 (2013.01); Y02E 10/52 (2013.01); Y02E 10/544 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method for producing a plurality of semiconductor components () is provided, comprising the following steps: a) providing a semiconductor layer sequence () having a first semiconductor layer (), a second semiconductor layer () and an active region (), said active region being arranged between the first semiconductor layer and the second semiconductor layer for generating and/or receiving radiation; b) forming a first connection layer () on the side of the second connection layer facing away from the first semiconductor layer; c) forming a plurality of cut-outs () through the semiconductor layer sequence; d) forming a conducting layer () in the cut-outs for establishing an electrically conductive connection between the first semiconductor layer and the first connection layer; and e) separating into the plurality of semiconductor components, wherein a semiconductor body () having at least one of the plurality of cut-outs arises from the semiconductor layer sequence for each semiconductor component and the at least one cut-out is completely surrounded by the semiconductor body in a top view of the semiconductor body. Furthermore, a semiconductor component is provided.


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