logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10074758 B1

PDFFull Text
Date of Patent:
Sep. 11, 2018

Filed:

Mar. 04, 2015

Back-contact si thin-film solar cell

Applicant:

Helmholtz-zentrum Für Materialien Und Energie Gmbh, Berlin, DE;

Inventors:

Daniel Amkreutz, Berlin, DE;

Jan Haschke, Neuchatel, CH;

Bernd Rech, Berlin, DE;

Assignee:

HELMHOLTZ-ZENTRUM BERLIN FUER MATERIALIEN UND ENERGIE GMBH, Berlin, DE;

Attorney:

Leydig, Voit & Mayer, Ltd.

Primary Examiner:

Matthew T Martin

Int. Cl.
CPC ...
H01L 31/0392 (2006.01); H01L 31/0445 (2014.01); H01L 31/0352 (2006.01); H01L 31/0216 (2014.01); H01L 31/20 (2006.01); H01L 31/0368 (2006.01); H01L 31/0747 (2012.01); H01L 31/18 (2006.01); H01L 31/0224 (2006.01); H01L 31/0288 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03921 (2013.01); H01L 31/0288 (2013.01); H01L 31/02167 (2013.01); H01L 31/02168 (2013.01); H01L 31/022441 (2013.01); H01L 31/03529 (2013.01); H01L 31/03682 (2013.01); H01L 31/0445 (2014.12); H01L 31/0747 (2013.01); H01L 31/182 (2013.01); H01L 31/1824 (2013.01); H01L 31/1868 (2013.01); H01L 31/1872 (2013.01); H01L 31/202 (2013.01); Y02E 10/546 (2013.01); Y02P 70/521 (2015.11);
Abstract

A back-contact Si thin-film solar cell includes a crystalline Si absorber layer and an emitter layer arranged on the crystalline Si absorber layer, which include a contact system being arranged on the back so as to collect excess charge carriers generated by the incidence of light in the absorber layer; a barrier layer having a layer thickness in a range of from 50 nm to 1 μm formed on a glass substrate; at least one coating layer intended for optical coating; and thin layer containing silicon and/or oxygen adjoining the crystalline Si absorber layer arranged on the at least one coating layer for improving the optical characteristics. The crystalline Si absorber layer can be produced by means of liquid-phase crystallization, is n-conducting, and has monocrystalline Si grains. An SiO2 passivation layer is formed between the layer containing silicon and/or oxygen and the Si absorber layer during the liquid-phase crystallization.

Find Patent Forward Citations

Loading…