The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 11, 2018

Filed:

Dec. 07, 2015
Applicant:

Alpha and Omega Semiconductor Limited, Hamilton, BM;

Inventors:

Anup Bhalla, Santa Clara, CA (US);

Xiaobin Wang, San Jose, CA (US);

Ji Pan, San Jose, CA (US);

Sung-Po Wei, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01); H01L 21/265 (2006.01); H01L 29/06 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7806 (2013.01); H01L 21/26513 (2013.01); H01L 29/1083 (2013.01); H01L 29/1095 (2013.01); H01L 29/41741 (2013.01); H01L 29/4236 (2013.01); H01L 29/66143 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 29/7809 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/8725 (2013.01); H01L 21/26586 (2013.01); H01L 29/0623 (2013.01); H01L 29/165 (2013.01); H01L 29/41766 (2013.01); H01L 29/456 (2013.01); H01L 29/47 (2013.01);
Abstract

A semiconductor device formed on a semiconductor substrate, comprising: an epitaxial layer overlaying the semiconductor substrate; a drain formed on back of the semiconductor substrate; a drain region that extends into the epitaxial layer; an active region; and an island region under the contact trench and disconnected from the body, the island region having an opposite polarity as the epitaxial layer. The active region comprises: a body disposed in the epitaxial layer; a source embedded in the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source and the body; and an active region contact electrode disposed within the active region contact trench.


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