The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2018
Filed:
Sep. 22, 2015
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventor:
Yoshiharu Takada, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); H01L 29/778 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 29/16 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 23/3192 (2013.01); H01L 23/562 (2013.01); H01L 24/05 (2013.01); H01L 29/1608 (2013.01); H01L 29/205 (2013.01); H01L 2224/02166 (2013.01); H01L 2924/1306 (2013.01);
Abstract
According to one embodiment, a semiconductor device includes a semiconductor layer, an electrode, and an insulating portion. The semiconductor layer has a first surface. The electrode is provided on the first surface of the semiconductor layer. The insulating portion includes a first layer and a second layer. The first layer covers the electrode on the first surface of the semiconductor layer and has a first internal stress along the first surface. The second layer is provided on the first layer and has a second internal stress in a reverse direction of the first internal stress.