The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2018
Filed:
Dec. 19, 2014
Applicant:
Hewlett Packard Enterprise Development Lp, Houston, TX (US);
Inventors:
Jianhua Yang, Palo Alto, CA (US);
Stanley Williams, Palo Alto, CA (US);
Max Zhang, Palo Alto, CA (US);
Zhiyong Li, Palo Alto, CA (US);
Assignee:
Hewlett Packard Enterprise Development LP, Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 27/26 (2006.01);
U.S. Cl.
CPC ...
H01L 27/26 (2013.01); H01L 47/005 (2013.01);
Abstract
A negative differential resistance (NDR) device for non-volatile memory cells in crossbar arrays is provided. Each non-volatile memory cell is situated at a crosspoint of the array. Each non-volatile memory cell comprises a switching layer in series with an NDR material containing fast diffusive atoms that are electrochemically inactive. The switching layer is positioned between two elec-trodes.