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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10074694 B1

PDFFull Text
Date of Patent:
Sep. 11, 2018

Filed:

Feb. 08, 2016

Memory device and method for manufacturing the same

Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Takeshi Takagi, Yokkaichi, JP;

Takeshi Yamaguchi, Yokkaichi, JP;

Masaki Yamato, Yokkaichi, JP;

Hiroyuki Ode, Yokkaichi, JP;

Toshiharu Tanaka, Yokkaichi, JP;

Assignee:

TOSHIBA MEMORY CORPORATION, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Thanhha Pham

Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); G11C 13/003 (2013.01); G11C 13/0007 (2013.01); H01L 27/2409 (2013.01); H01L 27/2418 (2013.01); H01L 27/2454 (2013.01); H01L 45/1226 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01); G11C 13/0033 (2013.01); G11C 2213/32 (2013.01); G11C 2213/71 (2013.01); G11C 2213/76 (2013.01); G11C 2213/77 (2013.01); G11C 2213/78 (2013.01); G11C 2213/79 (2013.01);
Abstract

According to one embodiment, a memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction crossing the first direction and a resistance change film provided between the first wiring and the second wiring. The second wiring includes a first conductive layer and a first intermediate layer including a first region provided between the first conductive layer and the resistance change film. The first intermediate layer includes a material having nonlinear resistance characteristics.

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