The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 11, 2018

Filed:

Jul. 28, 2017
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Tetsuya Shibata, Tokyo, JP;

Tsuyoshi Suzuki, Tokyo, JP;

Junichiro Urabe, Tokyo, JP;

Takekazu Yamane, Tokyo, JP;

Atsushi Shimura, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/39 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H03H 1/00 (2006.01); H03H 7/01 (2006.01);
U.S. Cl.
CPC ...
H01L 27/22 (2013.01); G11B 5/3903 (2013.01); G11B 5/3945 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H03H 1/0007 (2013.01); H03H 7/0153 (2013.01);
Abstract

A magnetoresistive effect device includes a first magnetoresistive effect element, a second magnetoresistive effect element, a first port, a second port, a signal line, and a direct-current input terminal. The first port, the first magnetoresistive effect element, and the second port are connected in series to each other in this order via the signal line. The second magnetoresistive effect element is connected to the signal line in parallel with the second port. The first magnetoresistive effect element and the second magnetoresistive effect element are formed so that the relationship between the direction of direct current that is input from the direct-current input terminal and that flows through the first magnetoresistive effect element and the order of arrangement of a magnetization fixed layer, a spacer layer, and a magnetization free layer in the first magnetoresistive effect element is opposite to the above relationship in the second magnetoresistive effect element.


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