The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2018
Filed:
Apr. 27, 2017
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/535 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 23/528 (2013.01); H01L 23/53295 (2013.01); H01L 29/0649 (2013.01); H01L 29/41758 (2013.01); H01L 29/4238 (2013.01); H01L 29/66568 (2013.01); H01L 29/78 (2013.01);
Abstract
There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.