The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 11, 2018

Filed:

Sep. 20, 2017
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Ji-Hwan Kim, Seoul, KR;

Dong-Uk Lee, Seoul, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 25/065 (2006.01); G01R 31/28 (2006.01); G01R 31/02 (2006.01);
U.S. Cl.
CPC ...
H01L 22/32 (2013.01); G01R 31/2884 (2013.01); H01L 25/0652 (2013.01); G01R 31/024 (2013.01); H01L 2225/06541 (2013.01);
Abstract

A stacked semiconductor device may include: a base die; and a plurality of core dies stacked over the base die, and suitable for communicating with allocated channels through a plurality of through-electrodes. Each of the core dies may include: a through-electrode scan unit enabled according to allocated channel information, and suitable for performing a down scan of transmitting a signal downward through through-electrodes connected in a column direction among the through-electrodes and an up scan of transmitting a signal upward through the through-electrodes connected in the column direction; and a defect detection unit suitable for detecting whether the through-electrodes have a defect, based on the down scan and the up scan.


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