The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2018
Filed:
May. 22, 2017
Ki-hyun Yoon, Hwaseong-si, KR;
Hauk Han, Hwaseong-si, KR;
Yeon-sil Sohn, Yongin-si, KR;
Seul-gi Bae, Yeosu-si, KR;
Hyun-seok Lim, Suwon-si, KR;
Ki-hyun Yoon, Hwaseong-si, KR;
Hauk Han, Hwaseong-si, KR;
Yeon-sil Sohn, Yongin-si, KR;
Seul-gi Bae, Yeosu-si, KR;
Hyun-seok Lim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of manufacturing a semiconductor device includes forming an insulating pattern layer on a substrate, conformally forming a first conductive layer with a first thickness on the insulating pattern layer, wet etching the first conductive layer to have a second thickness that is less than the first thickness, and forming a second conductive layer on the first conductive layer after wet etching the first conductive layer. The second conductive layer includes a material that is different from a material included in the first conductive layer.