The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 11, 2018

Filed:

Mar. 07, 2017
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Geetika Bajaj, New Delhi, IN;

Tapash Chakraborty, Mumbai, IN;

Prerna Sonthalia Goradia, Mumbai, IN;

Robert Jan Visser, Menlo Park, CA (US);

Bhaskar Kumar, Santa Clara, CA (US);

Deenesh Padhi, Sunnyvale, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/32 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76831 (2013.01); H01L 21/32 (2013.01); H01L 21/76832 (2013.01);
Abstract

Methods of discouraging poreseal deposition on metal (e.g. copper) at the bottom of a via during a poresealing process are described. A self-assembled monolayer (SAM) is selectively formed on the exposed metal surface and prevents or discourages formation of poreseal on the metal. The SAM is selectively formed by exposing a patterned substrate to a SAM molecule which preferentially binds to exposed metal surfaces rather than exposed dielectric surfaces. The selected SAM molecules tend to not bind to low-k films. The SAM and SAM molecule are also chosen so the SAM tolerates subsequent processing at relatively high processing temperatures above 140° C. or 160° C. Aliphatic or aromatic SAM molecules with thiol head moieties may be used to form the SAM.


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