The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2018
Filed:
Sep. 28, 2016
Applicant:
Cypress Semiconductor Corporation, San Jose, CA (US);
Inventor:
Amichai Givant, Rosh HaAyin, IL;
Assignee:
Cypress Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); H01L 23/522 (2006.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01); H01L 29/423 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3427 (2013.01); G11C 16/0466 (2013.01); G11C 16/10 (2013.01); H01L 23/5226 (2013.01); H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 29/42344 (2013.01); H01L 29/7923 (2013.01);
Abstract
A memory device that includes a pair of non-volatile memory cells, a first memory cell including a first memory gate and a first select gate, and a second memory cell including a second memory gate and a second select gate. The first and second memory cells share a source line, and the first and second memory gates are not connected to one another.