The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 11, 2018

Filed:

Jun. 16, 2017
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Jee-Yeon Keh, Gyeonggi-do, KR;

Jeong-Hun Lee, Chungcheongbuk-do, KR;

Sun-Ki Cho, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/28 (2006.01); G11C 16/32 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G11C 16/10 (2013.01); G11C 16/30 (2013.01); G11C 16/32 (2013.01);
Abstract

A semiconductor memory device includes a reference voltage generation block suitable for selecting and outputting one of a plurality of reference voltages in response to a voltage division enable signal, as an input reference voltage, in response to a selection enable signal; and a control signal generation block suitable for generating the voltage division enable signal and the selection enable signal in response to a reference voltage information.


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