The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2018
Filed:
Aug. 15, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Chea Ouk Lim, Hwaseong-si, KR;
Hyun Kook Park, Anyang-si, KR;
Jung Sunwoo, Seoul, KR;
Young Hoon Oh, Hwaseong-si, KR;
Yong Jun Lee, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A memory device having a resistance change material and an operating method of the memory device are provided. A memory device includes a memory cell array including first and second resistive memory cells, which store different data according to the change of their resistance; a buffer including first and second storage regions corresponding to the first and second resistive memory cells, respectively; and a control circuit receiving program data to be programmed to the memory cell array, comparing first data stored in the first storage region and second data stored in the first resistive memory cell, and as a result of the comparison determining one of the first and second storage regions as a storage region to which to write the program data.