Stacked image sensor pixel cell with selectable shutter modes and in-pixel cds

Abstract

A pixel cell has a photodiode, a transfer transistor, a reset transistor, an amplifier transistor and a readout circuit block. The photodiode, transfer transistor, reset transistor and amplifier transistor are disposed within a first substrate of a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode and converting the image charge to an image signal. The readout circuit block is disposed within a second substrate of a second semiconductor chip and the readout circuit block comprises optionally selectable rolling shutter and global shutter readout modes through the use of computer programmable digital register settings. The global shutter readout mode provides in-pixel correlated double sampling.