The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2018

Filed:

Nov. 04, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Eun-sub Shim, Anyang-si, KR;

Seung-sik Kim, Hwaseong-si, KR;

Kang-sun Lee, Hwaseong-si-si, KR;

Moo-sup Lim, Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/374 (2011.01); H04N 5/369 (2011.01); H04N 9/04 (2006.01); H01L 27/146 (2006.01); H04N 5/225 (2006.01); H04N 9/077 (2006.01);
U.S. Cl.
CPC ...
H04N 5/374 (2013.01); H01L 27/1464 (2013.01); H01L 27/14603 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H04N 5/2254 (2013.01); H04N 5/3696 (2013.01); H04N 9/045 (2013.01); H04N 9/077 (2013.01);
Abstract

Provided are an image sensor and an image capturing apparatus including the image sensor. The image sensor includes a pixel array including: multiple sensing pixels outputting image signals respectively corresponding to intensities of incident light; and at least one pair of focusing pixels that are adjacent each other, and each outputting a phase difference of the incident light as a focusing signal; wherein each focusing pixel includes: a semiconductor layer including a photodetecting device accumulating electric charges generated according to absorbed light from among the incident light; a wiring layer formed on a first surface of the semiconductor layer and including wirings; a planarization layer having a first surface on a second surface of the semiconductor layer; a shielding layer formed in the planarization layer to block some of the incident light to be incident to the photodetecting device; and a color filter layer and a micro lens layer.


Find Patent Forward Citations

Loading…