The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Jan. 21, 2016
Applicant:
Murata Manufacturing Co., Ltd., Nagaokakyo-shi, Kyoto-fu, JP;
Inventor:
Keiichi Umeda, Nagaokakyo, JP;
Assignee:
MURATA MANUFACTURING CO., LTD., Nagaokakyo-shi, Kyoto-fu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/13 (2006.01); H03H 9/17 (2006.01); H03H 9/21 (2006.01); H03H 3/02 (2006.01); H03H 9/05 (2006.01); H03H 3/04 (2006.01);
U.S. Cl.
CPC ...
H03H 9/17 (2013.01); H03H 3/02 (2013.01); H03H 9/13 (2013.01); H03H 9/174 (2013.01); H03H 9/21 (2013.01); H03H 9/0504 (2013.01); H03H 2003/0407 (2013.01);
Abstract
A piezoelectric resonator that includes a single crystal Si layer, a piezoelectric thin film formed from aluminum nitride and provided on the single crystal Si layer, and first and second electrodes provided so as to sandwich the piezoelectric thin film. An element excluding nitrogen and aluminum is doped into the piezoelectric thin film formed from aluminum nitride, and a synthetic acoustic velocity of portions of the piezoelectric resonator other than the single crystal Si layer substantially coincide with the acoustic velocity of the single crystal Si layer.