The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2018

Filed:

Nov. 06, 2014
Applicant:

Yeda Research and Development Co. Ltd., Rehovot, IL;

Inventors:

Shahal Ilani, Rehovot, IL;

Sharon Pecker, Rehovot, IL;

Avishai Benyamini, Rehovot, IL;

Jonah Waissman, Rehovot, IL;

Assaf Hamo, Rehovot, IL;

Maayan Honig, Rehovot, IL;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01); H01L 29/06 (2006.01); H01L 21/66 (2006.01); H01L 51/00 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/772 (2006.01); H01L 51/10 (2006.01); C01B 32/16 (2017.01);
U.S. Cl.
CPC ...
H01L 51/0558 (2013.01); H01L 22/14 (2013.01); H01L 29/0673 (2013.01); H01L 29/1029 (2013.01); H01L 29/66045 (2013.01); H01L 29/772 (2013.01); H01L 51/003 (2013.01); H01L 51/0012 (2013.01); H01L 51/0024 (2013.01); H01L 51/0031 (2013.01); H01L 51/0045 (2013.01); H01L 51/0048 (2013.01); H01L 51/0508 (2013.01); H01L 51/105 (2013.01); C01B 32/16 (2017.08);
Abstract

A method for use in construction of an electronic device and a transistor structure are presented. The method comprising: providing one or more nanotubes grown on a surface of a first substrate; providing a desired electrode arrangement fabricated on a surface of a second substrate. The electrode arrangement comprises at least two elevated source and drain electrodes and one or more gate electrodes located in between said elevated source and drain electrodes. The method also comprises bringing the electrode arrangement on the second substrate to close proximity with the first substrate such that surfaces of the first and second substrates face each other; scanning said first substrate with said electrode arrangement and determining contact of electrodes of the electrode arrangement with a nanotube located on the first substrate; and detaching said nanotube from the first substrate to provide a transistor structure comprising an isolated nanotube between the source and drain electrodes.


Find Patent Forward Citations

Loading…