The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2018

Filed:

Oct. 21, 2016
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Yen-Tai Chao, Hsinchu, TW;

Sen-Jung Hsu, Hsinchu, TW;

Tao-Chi Chang, Hsinchu, TW;

Wei-Chih Wen, Hsinchu, TW;

Ou Chen, Hsinchu, TW;

Yu-Shou Wang, Hsinchu, TW;

Chun-Hsiang Tu, Hsinchu, TW;

Jing-Feng Huang, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 29/06 (2006.01); H01L 29/04 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/20 (2010.01); H01L 33/22 (2010.01); H01L 33/10 (2010.01); H01L 33/16 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 33/005 (2013.01); H01L 33/007 (2013.01); H01L 33/20 (2013.01); H01L 33/0095 (2013.01); H01L 33/10 (2013.01); H01L 33/16 (2013.01); H01L 33/22 (2013.01); H01L 2933/0091 (2013.01);
Abstract

A light-emitting device comprises a substrate having an top surface; a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the top surface and exposes an exposing portion of the top surface; a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the exposing portion of the top surface form an acute angle α between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β between thereof.


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