The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Nov. 22, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/187 (2006.01); H01L 29/786 (2006.01); H03F 1/02 (2006.01); H03F 3/45 (2006.01); A61B 5/0482 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78624 (2013.01); A61B 5/0482 (2013.01); H01L 29/165 (2013.01); H01L 29/66356 (2013.01); H01L 29/66977 (2013.01); H01L 29/7391 (2013.01); H01L 29/7843 (2013.01); H01L 29/7845 (2013.01); H03F 1/0205 (2013.01); H03F 3/45179 (2013.01); H03F 3/45475 (2013.01); H03F 2203/45116 (2013.01); H03F 2203/45118 (2013.01); H03F 2203/45288 (2013.01);
Abstract
Neural signal amplifiers include an operational amplifier and a feedback network coupled between an output and an input thereof. The feedback network includes a tunnel field effect transistor ('TFET') pseudo resistor that exhibits bi-directional conductivity. A drain region of the TFET may be electrically connected to the gate electrode thereof to provide a bi-directional resistor having good symmetry in terms of resistance as a function of voltage polarity.