The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2018

Filed:

Sep. 19, 2017
Applicant:

Shanghai Tianma Am-oled Co., Ltd., Shanghai, CN;

Inventors:

Guowen Yan, Shanghai, CN;

Qiang Fei, Shanghai, CN;

Weiqi Xu, Shanghai, CN;

Zhengkui Dong, Shanghai, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/49 (2006.01); H01L 29/417 (2006.01); H01L 21/44 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/45 (2006.01); H01L 21/477 (2006.01); H01L 21/467 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 21/02244 (2013.01); H01L 21/44 (2013.01); H01L 29/41733 (2013.01); H01L 29/41775 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 21/467 (2013.01); H01L 21/477 (2013.01); H01L 27/1225 (2013.01); H01L 29/45 (2013.01);
Abstract

An array substrate, a fabrication method thereof, and a display panel are provided. The array substrate comprises a substrate, and a plurality of thin-film-transistors, which includes an active layer formed on the substrate including a source region, a drain region, and a channel region located between the source region and the drain region, a source electrode metal contact layer, a drain electrode metal contact layer, a barrier layer formed on a side of the active layer facing away from the substrate, a source electrode formed on a side of the source electrode metal contact layer facing away from active layer, a drain electrode formed on a side of the drain electrode metal contact layer facing away from the active layer, and a gate electrode insulated from the barrier layer and formed on a side of the barrier layer facing away from the active layer.


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