The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Apr. 10, 2015
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventor:
Fumitake Mieno, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/165 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0638 (2013.01); H01L 21/762 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/0653 (2013.01); H01L 29/165 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract
A method for manufacturing a semiconductor device may include forming a semiconductor portion, forming a doped portion, and forming a dielectric member. A side of the dielectric member abuts each of the semiconductor portion and the doped portion. A first half of the doped portion is positioned between the semiconductor portion and a second half of the doped portion. A dopant concentration of the second half of the doped portion is greater than a dopant concentration of the first half of the doped portion.