The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2018

Filed:

Jan. 13, 2017
Applicant:

Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;

Inventor:

Chunsheng Jiang, Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/32 (2006.01); H01L 21/265 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 51/56 (2006.01); H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/266 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 51/50 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02631 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/308 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 21/32139 (2013.01); H01L 21/76802 (2013.01); H01L 27/1222 (2013.01); H01L 27/1288 (2013.01); H01L 27/3248 (2013.01); H01L 27/3258 (2013.01); H01L 27/3276 (2013.01); H01L 29/4908 (2013.01); H01L 29/66757 (2013.01); H01L 29/78666 (2013.01); H01L 51/56 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1248 (2013.01); H01L 27/1262 (2013.01); H01L 51/5056 (2013.01); H01L 51/5088 (2013.01); H01L 2227/323 (2013.01);
Abstract

A manufacturing method of an array substrate of an OLED display device is provided. Active areas of a first thin film transistor Tand a second thin film transistor Tare formed by a first mask; channel doping areas, source electrode doping areas and drain electrode doping areas of Tand Tare formed by a second mask; gate electrodes of Tand Tare formed by a third mask; vias are formed by a fourth mask; source electrodes and drain electrodes of Tand T, a data line and a pixel electrode are formed by a fifth mask. The manufacturing method can simplify the process steps.


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