The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2018

Filed:

Jan. 31, 2014
Applicant:

New Imaging Technologies, Verriers le Buisson, FR;

Inventor:

Yang Ni, Palaiseau, FR;

Assignee:

NEW IMAGING TECHNOLOGIES, Verrieres le Buisson, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0304 (2006.01); H01L 31/109 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14649 (2013.01); H01L 27/1461 (2013.01); H01L 27/14694 (2013.01); H01L 31/03046 (2013.01); H01L 31/109 (2013.01); H01L 31/1844 (2013.01);
Abstract

The invention concerns a photodiode array, and the method for producing same, comprising—a cathode comprising at least one substrate layer () made from a material from the indium phosphide family and one active layer () made from a material from the gallium indium arsenide family, and characterized in that the array further comprises at least two sorts of doped regions of the same type at least partially formed in the active layer ():—first doped regions () forming, with the cathode, photodiodes for forming images,—at least one second doped region () absorbing excess charge carriers so as to discharge them.


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