The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Jul. 19, 2016
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Yun-Hui Yang, Gyeonggi-do, KR;
Sung-Kun Park, Gyeonggi-do, KR;
Pyong-Su Kwag, Gyeonggi-do, KR;
Ho-Ryeong Lee, Gyeonggi-do, KR;
Young-Jun Kwon, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 21/28 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14616 (2013.01); H01L 21/28114 (2013.01); H01L 21/823412 (2013.01); H01L 21/823456 (2013.01); H01L 21/823487 (2013.01); H01L 27/14614 (2013.01); H01L 27/14638 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H01L 27/14692 (2013.01); H01L 29/1037 (2013.01); H01L 29/66666 (2013.01); H01L 29/66787 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01); H01L 27/1464 (2013.01); H01L 27/14605 (2013.01); H01L 27/14641 (2013.01); H01L 29/42376 (2013.01); H01L 29/42384 (2013.01); H01L 29/6675 (2013.01); H01L 29/78672 (2013.01);
Abstract
This technology relates to an image sensor. The image sensor may include a substrate including a photoelectric conversion element; a pillar formed over the photoelectric conversion element and having a concave-convex sidewall; a channel film formed along a surface of the pillar and for having at least one end coupled to the photoelectric conversion element; and a transfer gate formed over the channel film.