The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Jan. 22, 2015
Applicant:
X-fab Semiconductor Foundries Ag, Erfurt, DE;
Inventors:
Daniel Gaebler, Apolda, DE;
Xuezhou Cao, Plymouth, GB;
Assignee:
X-FAB SEMICONDUCTOR FOUNDRIES AG, Erfurt, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14603 (2013.01); H01L 27/14612 (2013.01); H01L 27/14641 (2013.01); H01L 27/14643 (2013.01);
Abstract
A CMOS image sensor pixel () comprising a photosensitive element () for generating a charge in response to incident light; a plurality of charge storage elements (); a plurality of transfer gates () for enabling the transfer of charge between the photosensitive element and an associated one of the charge storage elements; and one or more first electrical connections () for placing at least two of the plurality of charge storage elements in mutual electrical contact.