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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10068925 B1

PDFFull Text
Date of Patent:
Sep. 04, 2018

Filed:

Mar. 16, 2017

Thin film transistor, thin film transistor panel, and method for manufacturing the same

Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Sung Hoon Yang, Seoul, KR;

Shin Il Choi, Hwaseong-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:

H.C. Park & Associates, PLC

Primary Examiner:

Jami M Valentine

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/12 (2006.01); H01L 23/535 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 21/465 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 21/465 (2013.01); H01L 21/47635 (2013.01); H01L 23/535 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1288 (2013.01); H01L 29/41733 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01);
Abstract

A thin film transistor includes a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode and includes a channel layer comprising an oxide semiconductor and an auxiliary layer comprising amorphous silicon. The source electrode and the drain electrode are separated from each other and connected to the semiconductor layer. A thin film transistor array panel and method of manufacturing same also is disclosed.

Find Patent Forward Citations

Yang, Sung. (2018). Thin film transistor, thin film transistor panel, and method for manufacturing the same (U.S. Patent No. 10068925). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10068925

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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