The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2018

Filed:

May. 15, 2015
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Henry Litzmann Edwards, Garland, TX (US);

Greg Charles Baldwin, Plano, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/08 (2006.01); H01L 21/8238 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 29/76 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/12 (2006.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/42376 (2013.01); H01L 29/7391 (2013.01); H01L 29/7613 (2013.01); H01L 29/775 (2013.01); H01L 29/7836 (2013.01); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01); H01L 27/15 (2013.01); H01L 29/1083 (2013.01); H01L 29/122 (2013.01); H01L 29/6659 (2013.01); H01L 29/7833 (2013.01);
Abstract

Methods and apparatus for artificial exciton devices. An artificial exciton device includes a semiconductor substrate; at least one well region doped to a first conductivity type in a portion of the semiconductor substrate; a channel region in a central portion of the well region; a cathode region in the well region doped to a second conductivity type; an anode region in the well region doped to the first conductivity type; a first lightly doped drain region disposed between the cathode region and the channel region doped to the first conductivity type; a second lightly doped drain region disposed between the anode region and the channel region doped to the second conductivity type; and a gate structure overlying the channel region, the gate structure comprising a gate dielectric layer lying over the channel region and a gate conductor material overlying the gate dielectric. Methods are disclosed.


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